BLF278/01,112 NXP Semiconductors, BLF278/01,112 Datasheet - Page 5

• Manufacturer Part Number: BLF278/01,112
• Description: TRANSISTOR VHF PWR DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278/01,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT-262A1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031850112

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
(mV/K)
R DSon
V
Fig.4
V
Fig.6
(m )
T.C.
DS
GS
400
300
200
100
= 10 V.
= 10 V; I
0
1
2
3
4
5
0
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
2
D
= 5 A.
10
50
1
100
1
T j ( C)
I D (A)
MGE621
MGE623
150
10
5
handbook, halfpage
handbook, halfpage
V
Fig.5
(pF)
V
Fig.7
C
DS
GS
(A)
1200
I D
800
400
= 10 V; T
= 0; f = 1 MHz.
30
20
10
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
j
= 25 C.
20
5
10
40
Product Specification
C os
C is
V GS (V)
V DS (V)
BLF278
MGE622
MGE615
15
60