MRFG35003ANT1 Freescale Semiconductor, MRFG35003ANT1 Datasheet - Page 2

• Manufacturer Part Number: MRFG35003ANT1
• Description: TRANSISTOR RF 3W 12V PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35003ANT1

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10.8dB
• Voltage - Rated: 15V
• Current Rating: 1.3A
• Current - Test: 55mA
• Voltage - Test: 12V
• Power - Output: 3W
• Package / Case: PLD-1.5
• Configuration: Single
• Drain Source Voltage Vds: 15 V
• Gate-source Breakdown Voltage: - 5 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

2
MRFG35003ANT1
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Saturated Drain Current
Off State Leakage Current
Off State Drain Current
Off State Current
Gate- Source Cut - off Voltage
Quiescent Gate Voltage
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Output Power, 1 dB Compression Point, CW
(V
(V
(V
(V
(V
(V
DS
GS
DS
DS
DS
DS
= 3.5 Vdc, V
= - 0.4 Vdc, V
= 12 Vdc, V
= 28.5 Vdc, V
= 3.5 Vdc, I
= 12 Vdc, I
D
DS
GS
GS
= 80 mA)
GS
DS
= 6.5 mA)
= - 2.5 Vdc)
= 0 Vdc)
Characteristic
= 0 Vdc)
= - 2.5 Vdc)
Test Methodology
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 12 Vdc, I
DD
Symbol
V
V
ACPR
P
I
I
I
I
GS(th)
GS(Q)
G
DSO
DSS
GSS
DSX
= 12 Vdc, I
h
1dB
ps
D
Rating
DQ
3
= 55 mA, P
DQ
= 55 mA, f = 3550 MHz
Min
- 1.2
- 1.2
9.5
—
—
—
—
22
—
—
out
Package Peak Temperature
= 300 mWatts Avg., f = 3550 MHz,
10.8
24.5
Typ
- 0.9
- 0.9
1.3
< 1
- 43
—
2
3
260
1C (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
100
450
- 0.7
- 0.7
- 40
—
—
—
—
7
RF Device Data
mAdc
μAdc
μAdc
Unit
Unit
Adc
Vdc
Vdc
dBc
dB
°C
%
W