MRFG35003ANT1 Freescale Semiconductor, MRFG35003ANT1 Datasheet - Page 7

• Manufacturer Part Number: MRFG35003ANT1
• Description: TRANSISTOR RF 3W 12V PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35003ANT1

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10.8dB
• Voltage - Rated: 15V
• Current Rating: 1.3A
• Current - Test: 55mA
• Voltage - Test: 12V
• Power - Output: 3W
• Package / Case: PLD-1.5
• Configuration: Single
• Drain Source Voltage Vds: 15 V
• Gate-source Breakdown Voltage: - 5 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
14
12
10
12
10
8
6
4
2
0
8
6
4
2
0
3450
3450
18
NOTE: Data is generated from the test circuit shown.
Figure 7. Single - Carrier W - CDMA Power Gain
Figure 9. Single - Carrier OFDM EVM and Drain
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
V
Single−Carrier OFDM 802.16d 64 QAM
7 MHz Channel Bandwidth
PAR = 9.5 dB @ 0.01% Probability (CCDF)
Figure 8. Single - Carrier W - CDMA ACPR and
DS
DS
= 12 Vdc, I
= 12 Vdc, I
and Drain Efficiency versus Frequency
TYPICAL CHARACTERISTICS
Input Return Loss versus Frequency
20
Efficiency versus Output Power
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
DS
3500
3500
DQ
DQ
= 12 Vdc, I
22
P
= 55 mA, P
= 55 mA, f = 3550 MHz
out
ACPR
G
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
IRL
, OUTPUT POWER (dBm)
η
ps
D
η
D
DQ
24
= 55 mA, P
out
3550
3550
EVM
= 300 mW
26
3
out
/
4
= 300 mW
28
3600
3600
30
3650
3650
32
34
32
30
28
26
24
22
60
50
40
30
20
10
0
0
−5
−10
−15
−20
−25
MRFG35003ANT1
7