MRFG35003ANT1 Freescale Semiconductor, MRFG35003ANT1 Datasheet - Page 5

• Manufacturer Part Number: MRFG35003ANT1
• Description: TRANSISTOR RF 3W 12V PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35003ANT1

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10.8dB
• Voltage - Rated: 15V
• Current Rating: 1.3A
• Current - Test: 55mA
• Voltage - Test: 12V
• Power - Output: 3W
• Package / Case: PLD-1.5
• Configuration: Single
• Drain Source Voltage Vds: 15 V
• Gate-source Breakdown Voltage: - 5 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

RF Device Data
Freescale Semiconductor
NOTE: All data is referenced to package lead interface. Γ
All data is generated from load pull, not from the test circuit shown.
−10
−20
−30
−40
−50
−60
16
14
12
10
8
6
4
18
18
Figure 3. Single - Carrier W - CDMA Power Gain
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
Figure 4. Single - Carrier W - CDMA ACPR and
DS
S
DS
S
and Drain Efficiency versus Output Power
= 0.833é−108.2_, Γ
= 0.833é−108.2_, Γ
Input Return Loss versus Output Power
= 12 Vdc, I
= 12 Vdc, I
TYPICAL CHARACTERISTICS
20
20
G
ps
DQ
DQ
22
22
P
P
= 55 mA, f = 3550 MHz
= 55 mA, f = 3550 MHz
out
out
ACPR
η
IRL
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
D
L
L
= 0.698é−151.1_
24
= 0.698é−151.1_
24
S
and Γ
26
26
L
are the impedances presented to the DUT.
28
28
30
30
32
32
60
50
40
30
20
10
0
−5
−10
−15
−20
−25
−30
MRFG35003ANT1
5