MRF7S18170HR3

Manufacturer Part NumberMRF7S18170HR3
DescriptionTRANSISTOR RF LDMOS NI-880
ManufacturerFreescale Semiconductor
MRF7S18170HR3 datasheet
 


Specifications of MRF7S18170HR3

Transistor TypeLDMOSFrequency1.81GHz
Gain17.5dBVoltage - Rated65V
Current Rating10µACurrent - Test1.4A
Voltage - Test28VPower - Output50W
Package / CaseNI-880Lead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1805 to
1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: V
1400 mA, P
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
out
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW
Output Power
• P
@ 1 dB Compression Point w 170 Watts CW
out
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 84°C, 170 W CW
Case Temperature 79°C, 50 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Document Number: MRF7S18170H
MRF7S18170HR3
MRF7S18170HSR3
1805 - 1880 MHz, 50 W AVG., 28 V
= 28 Volts, I
=
DD
DQ
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Symbol
R
θJC
MRF7S18170HR3 MRF7S18170HSR3
Rev. 1, 12/2008
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S18170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S18170HSR3
Value
Unit
- 0.5, +65
Vdc
- 6.0, +10
Vdc
32, +0
Vdc
- 65 to +150
°C
150
°C
225
°C
(2,3)
Value
Unit
°C/W
0.27
0.30
1

MRF7S18170HR3 Summary of contents

  • Page 1

    ... MHz AVG Volts Symbol V DSS stg Symbol R θJC MRF7S18170HR3 MRF7S18170HSR3 Rev. 1, 12/2008 SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRF7S18170HR3 CASE 465C - 02, STYLE 880S MRF7S18170HSR3 Value Unit - 0.5, +65 Vdc - 6.0, +10 Vdc 32, +0 Vdc - 65 to +150 °C 150 ° ...

  • Page 2

    ... Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S18170HR3 MRF7S18170HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I ...

  • Page 3

    ... Min Typ Max = 1400 mA, 1805 - 1880 MHz Bandwidth — 25 — — 0.4 — — 2.5 — — 4.2 — — 15 — — 0.015 — — 0.01 — MRF7S18170HR3 MRF7S18170HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...

  • Page 4

    ... Z7 0.120″ x 1.360″ Microstrip Z8 0.480″ x 1.360″ Microstrip Z9 0.060″ x 1.098″ Microstrip Figure 1. MRF7S18170HR3 Test Circuit Schematic — 880 Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values — 880 Part C1 0.8 pF Chip Capacitor C2, C8, C9 6.8 pF Chip Capacitors C3 100 pF Chip Capacitor ...

  • Page 5

    ... C18 C19 Figure 2. MRF7S18170HR3 Test Circuit Component Layout — 880 RF Device Data Freescale Semiconductor C20 C13 C10 C17 C11 C12 C9 C8 C15 C14 C6 C7 C16 C5 MRF7S18170H Rev. 4 MRF7S18170HR3 MRF7S18170HSR3 5 ...

  • Page 6

    ... Chip Capacitor C15 0.2 pF Chip Capacitor C16, C17 4.7 pF Chip Capacitors C18 2 pF Chip Capacitor C19 0.3 pF Chip Capacitor C20 0.1 pF Chip Capacitor 1/4 W Chip Resistor R2 kW, 1/4 W Chip Resistors MRF7S18170HR3 MRF7S18170HSR3 6 Z16 Z5 C10 C17 Z10 DUT C20 C14 Z17 ...

  • Page 7

    ... C18 C19 Figure 4. MRF7S18170HSR3 Test Circuit Component Layout — 880S RF Device Data Freescale Semiconductor C20 C13 C10 C17 C11 C12 C9 C8 C15 C14 C6 C7 C16 C5 MRF7S18170H Rev. 4 MRF7S18170HR3 MRF7S18170HSR3 7 ...

  • Page 8

    ... Vdc 1835 MHz 1845 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 7. Two - Tone Power Gain versus Output Power MRF7S18170HR3 MRF7S18170HSR3 8 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.), I = 1400 mA DD out DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 7 ...

  • Page 9

    ... IM5−L IM7−L 10 TWO−TONE SPACING (MHz) Figure 10. Intermodulation Distortion Products versus Tone Spacing Actual 25 20 105 120 −30_C 25_C T = −30_C C 85_C 25_C 85_C Vdc 1400 1840 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S18170HR3 MRF7S18170HSR3 100 400 9 ...

  • Page 10

    ... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 16. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S18170HR3 MRF7S18170HSR3 10 TYPICAL CHARACTERISTICS 1400 1840 MHz ...

  • Page 11

    ... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF7S18170HR3 MRF7S18170HSR3 11 ...

  • Page 12

    ... INPUT POWER (dBm) in NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Z source Ω 3dB 1.23 - j7.91 Figure 19. Pulsed CW Output Power versus Input Power MRF7S18170HR3 MRF7S18170HSR3 12 61 Ideal 60 59 P3dB = 54.65 dBm (290 P1dB = 54.05 dBm 56 (254.1 W) ...

  • Page 13

    ... N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF7S18170HR3 MRF7S18170HSR3 5.08 1.14 0.15 1.70 5.33 13 ...

  • Page 14

    ... Replaced Fig. 15, MTTF versus Junction Temperature, with updated graph; removed Amps operating characteristics and location of MTTF calculator for device • Updated Fig. 16, CCDF W - CDMA 3GPP, Test Model 1, 64 PDCH, 50% Clipping, Single - Carrier Test Signal, to show input signal only MRF7S18170HR3 MRF7S18170HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY ...

  • Page 15

    ... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF7S18170HR3 MRF7S18170HSR3 15 ...