MRF7S18170HR3 Freescale Semiconductor, MRF7S18170HR3 Datasheet - Page 3

• Manufacturer Part Number: MRF7S18170HR3
• Description: TRANSISTOR RF LDMOS NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18170HR3

• Transistor Type: LDMOS
• Frequency: 1.81GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Video Bandwidth @ 170 W PEP P
Gain Flatness in 75 MHz Bandwidth @ P
Average Deviation from Linear Phase in 75 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
@ P
f = 1840 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
out
= 170 W CW
out
Characteristic
= 170 W CW, f = 1840 MHz
out
where IM3 = - 30 dBc
(T
out
C
out
= 25°C unless otherwise noted)
= 50 W Avg.
= 170 W CW,
DD
= 28 Vdc, I
Symbol
(continued)
ΔP1dB
Delay
VBW
ΔΦ
ΔG
G
Φ
F
DQ
= 1400 mA, 1805 - 1880 MHz Bandwidth
Min
—
—
—
—
—
—
—
MRF7S18170HR3 MRF7S18170HSR3
0.015
0.01
Typ
0.4
2.5
4.2
25
15
Max
—
—
—
—
—
—
—
dBm/°C
dB/°C
MHz
Unit
dB
ns
°
°
3