MRFG35002N6R5 Freescale Semiconductor, MRFG35002N6R5 Datasheet - Page 2

• Manufacturer Part Number: MRFG35002N6R5
• Description: TRANSISTOR RF 1.5W 6V POWER FET
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35002N6R5

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10dB
• Voltage - Rated: 8V
• Current Rating: 1.7A
• Current - Test: 65mA
• Voltage - Test: 6V
• Power - Output: 1.5W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Drain-source Volt (max): 8V
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFG35002N6R5TR

MRFG35002N6T1
2
Table 4. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V
Saturated Drain Current
Off State Leakage Current
Off State Drain Current
Off State Current
Gate - Source Cut - off Voltage
Quiescent Gate Voltage
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Output Power, 1 dB Compression Point, CW
(V
(V
(V
(V
(V
(V
DS
GS
DS
DS
DS
DS
= 3.5 Vdc, V
= - 0.4 Vdc, V
= 6 Vdc, V
= 28.5 Vdc, V
= 3.5 Vdc, I
= 6 Vdc, I
D
GS
DS
= 65 mA)
GS
DS
= - 2.5 Vdc)
GS
= 8.7 mA)
= 0 Vdc)
Characteristic
= 0 Vdc)
= - 2.5 Vdc)
(T
C
= 25°C unless otherwise noted)
DD
= 6 Vdc, I
Symbol
DD
V
V
ACPR
P
I
I
I
I
GS(th)
GS(Q)
G
DSO
DSS
GSS
DSX
h
1dB
= 6 Vdc, I
ps
D
DQ
= 65 mA, P
DQ
= 65 mA, f = 3550 MHz
Min
- 1.2
- 1.1
8.5
23
—
—
—
—
—
—
out
= 158.5 mW Avg., f = 3550 MHz,
< 1.0
< 1.0
Typ
- 0.9
- 0.8
1.7
- 41
1.5
10
27
—
Freescale Semiconductor
Max
100
600
- 0.7
- 0.6
- 38
—
—
—
—
9
RF Device Data
mAdc
μAdc
μAdc
Unit
Adc
Vdc
Vdc
dBc
dB
%
W