MRFG35002N6R5 Freescale Semiconductor, MRFG35002N6R5 Datasheet - Page 5

• Manufacturer Part Number: MRFG35002N6R5
• Description: TRANSISTOR RF 1.5W 6V POWER FET
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35002N6R5

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10dB
• Voltage - Rated: 8V
• Current Rating: 1.7A
• Current - Test: 65mA
• Voltage - Test: 6V
• Power - Output: 1.5W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Drain-source Volt (max): 8V
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFG35002N6R5TR

RF Device Data
Freescale Semiconductor
NOTE: All data is referenced to package lead interface. Γ
All data is generated from load pull, not from the test circuit shown.
−20
−30
−40
−50
−60
14
12
10
8
6
4
0
0
Figure 4. Single - Carrier W - CDMA ACPR and
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
DS
S
DS
S
Input Return Loss versus Output Power
= 0.813é−115.4_, Γ
= 0.813é−115.4_, Γ
= 6 Vdc, I
= 6 Vdc, I
Figure 3. Transducer Gain and Drain
TYPICAL CHARACTERISTICS
Efficiency versus Output Power
5
6
G
η
DQ
DQ
T
D
ACPR
IRL
P
P
= 75 mA, f = 3550 MHz
= 75 mA, f = 3550 MHz
out
out
10
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
L
12
L
= 0.748é−147.8_
= 0.748é−147.8_
15
S
and Γ
18
20
L
are the impedances presented to the DUT.
24
25
30
30
50
40
30
20
10
0
0
−5
−10
−15
−20
MRFG35002N6T1
5