MRFG35002N6R5 Freescale Semiconductor, MRFG35002N6R5 Datasheet - Page 6

• Manufacturer Part Number: MRFG35002N6R5
• Description: TRANSISTOR RF 1.5W 6V POWER FET
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35002N6R5

• Transistor Type: pHEMT FET
• Frequency: 3.55GHz
• Gain: 10dB
• Voltage - Rated: 8V
• Current Rating: 1.7A
• Current - Test: 65mA
• Voltage - Test: 6V
• Power - Output: 1.5W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Drain-source Volt (max): 8V
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFG35002N6R5TR

MRFG35002N6T1
6
−20
−30
−40
−50
−60
14
12
10
8
6
4
NOTE: Data is generated from the test circuit shown.
0
0
Figure 5. Single - Carrier W - CDMA Power Gain
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Figure 6. Single - Carrier W - CDMA ACPR and
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
DS
and Drain Efficiency versus Output Power
DS
Input Return Loss versus Output Power
= 6 Vdc, I
= 6 Vdc, I
TYPICAL CHARACTERISTICS
6
6
DQ
DQ
η
ACPR
IRL
G
D
P
P
= 65 mA, f = 3550 MHz
= 65 mA, f = 3550 MHz
ps
out
out
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
12
12
18
18
24
24
30
30
50
40
30
20
10
0
−5
−10
−15
−20
−25
Freescale Semiconductor
RF Device Data