MRF19030LSR3 Freescale Semiconductor, MRF19030LSR3 Datasheet

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MRF19030LSR3

Manufacturer Part Number
MRF19030LSR3
Description
IC MOSFET RF N-CHAN NI-400S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF19030LSR3

Transistor Type
N-Channel
Frequency
1.96GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
1µA
Current - Test
300mA
Voltage - Test
26V
Power - Output
30W
Package / Case
NI-400S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
4.5W
Power Gain (typ)@vds
13dB
Frequency (min)
1.8GHz
Frequency (max)
2GHz
Package Type
NI-400S
Pin Count
3
Forward Transconductance (typ)
2S
Input Capacitance (typ)@vds
98.5@26VpF
Output Capacitance (typ)@vds
37@26VpF
Reverse Capacitance (typ)
1.3@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
36%
Mounting
Surface Mount
Mode Of Operation
CDMA/FM/TDMA
Number Of Elements
1
Power Dissipation (max)
83300mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF19030LSR3
Manufacturer:
BROADCOM
Quantity:
85
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for class AB PCN and PCS base station applications with
Output Power
Derate above 25°C
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc in 30 kHz BW
1.25 MHz — - 55 dBc in 12.5 kHz BW
2.25 MHz — - 55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF19030
1930 - 1990 MHz, 30 W, 26 V
MRF19030LSR3
MRF19030LR3
LATERAL N - CHANNEL
CASE 465E - 04, STYLE 1
MRF19030LR3 MRF19030LSR3
RF POWER MOSFETs
CASE 465F - 04, STYLE 1
M3 (Minimum)
2 (Minimum)
MRF19030LSR3
- 65 to +150
MRF19030LR3
- 0.5, +65
- 0.5, +15
Value
Value
Class
83.3
0.48
NI - 400S
150
200
2.1
NI - 400
Rev. 12, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF19030LSR3 Summary of contents

Page 1

... RF POWER MOSFETs CASE 465E - 04, STYLE 400 MRF19030LR3 CASE 465F - 04, STYLE 400S MRF19030LSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc 0.48 W/° +150 °C stg T 150 ° 200 °C J Symbol Value Unit R 2.1 °C/W θJC Class 2 (Minimum) M3 (Minimum) MRF19030LR3 MRF19030LSR3 1 ...

Page 2

... MHz and f1 = 1990.0 MHz 1990.1 MHz) Input Return Loss ( Vdc PEP 300 mA 1930.0 MHz, DD out 1930.1 MHz and f1 = 1990.0 MHz 1990.1 MHz) 1. Part is internally matched both on input and output. MRF19030LR3 MRF19030LSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS ...

Page 3

... Microstrip 0.510″ x 0.200″ Microstrip 0.325″ x 0.280″ Microstrip 0.080″ x 0.480″ Microstrip 0.080″ x 0.530″ Microstrip 0.080″ x 0.671″ Microstrip ® 0.030″ x 3.00″ x 5.00″ Glass Teflon Arlon MRF19030LR3 MRF19030LSR3 V SUPPLY + ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout MRF19030LR3 MRF19030LSR3 ...

Page 5

... Order 10 , OUTPUT POWER (WATTS) PEP out versus Output Power = 30 W (PEP) out G ps IMD DRAIN VOLTAGE (VOLTS) DD Figure 8. Power Gain and MRF19030LR3 MRF19030LSR3 −20 −30 −40 −50 −60 −70 −80 −90 −100 12 100 −22 −24 −26 −28 −30 −32 −34 − ...

Page 6

... MHz Z load f = 1930 MHz Figure 9. Series Equivalent Source and Load Impedance MRF19030LR3 MRF19030LSR3 1990 MHz Z source f = 1930 MHz = 25 Ω 300 mA PEP DD DQ out source load MHz Ω Ω 1930 10.57 - j7.69 5.81 - j5.01 1960 10.54 - j7.43 5.84 - j4.67 1990 10.47 - j7.21 5 ...

Page 7

... S .395 .405 10.03 10.29 aaa .005 REF 0.127 REF bbb .010 REF 0.254 REF ccc .015 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF19030LR3 MRF19030LSR3 MAX 20.44 9.9 4.14 7.24 1.14 0.15 1.7 3.1 10.3 10.3 3.3 10.3 10.3 7 ...

Page 8

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF19030LR3 MRF19030LSR3 Document Number: MRF19030 Rev. 12, 5/2006 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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