MRF19030LSR3 Freescale Semiconductor, MRF19030LSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF19030LSR3
• Description: IC MOSFET RF N-CHAN NI-400S
• Manufacturer: Freescale Semiconductor

Specifications of MRF19030LSR3

• Transistor Type: N-Channel
• Frequency: 1.96GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 1µA
• Current - Test: 300mA
• Voltage - Test: 26V
• Power - Output: 30W
• Package / Case: NI-400S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 4.5W
• Power Gain (typ)@vds: 13dB
• Frequency (min): 1.8GHz
• Frequency (max): 2GHz
• Package Type: NI-400S
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Input Capacitance (typ)@vds: 98.5@26VpF
• Output Capacitance (typ)@vds: 37@26VpF
• Reverse Capacitance (typ): 1.3@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 36%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/FM/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 83300mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF19030LR3 MRF19030LSR3
6
Z
load
f = 1990 MHz
f = 1930 MHz
Figure 9. Series Equivalent Source and Load Impedance
Z
Z
Input
Matching
Network
source
load
Z
o
1930
1960
1990
MHz
= 25 Ω
f
V
= Test circuit impedance as measured from
= Test circuit impedance as measured
DD
f = 1990 MHz
= 26 V, I
gate to ground.
from drain to ground.
Z
source
f = 1930 MHz
10.57 - j7.69
10.54 - j7.43
10.47 - j7.21
Z
DQ
source
Device
Under Test
Ω
= 300 mA, P
Z
source
out
Z
= 30 W PEP
load
5.81 - j5.01
5.84 - j4.67
5.84 - j4.35
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data