MRF19030LSR3 Freescale Semiconductor, MRF19030LSR3 Datasheet - Page 5

• Manufacturer Part Number: MRF19030LSR3
• Description: IC MOSFET RF N-CHAN NI-400S
• Manufacturer: Freescale Semiconductor

Specifications of MRF19030LSR3

• Transistor Type: N-Channel
• Frequency: 1.96GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 1µA
• Current - Test: 300mA
• Voltage - Test: 26V
• Power - Output: 30W
• Package / Case: NI-400S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 4.5W
• Power Gain (typ)@vds: 13dB
• Frequency (min): 1.8GHz
• Frequency (max): 2GHz
• Package Type: NI-400S
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Input Capacitance (typ)@vds: 98.5@26VpF
• Output Capacitance (typ)@vds: 37@26VpF
• Reverse Capacitance (typ): 1.3@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 36%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/FM/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 83300mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

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RF Device Data
Freescale Semiconductor
30
20
10
50
40
Figure 3. Class AB Broadband Circuit Performance
15
14
13
12
11
1900
0
1.0
1.0
350 mA
V
I
Two−Tone Measurement, 100 kHz Tone Spacing
V
Two−Tone Measurement,
100 kHz Tone Spacing
400 mA
300 mA
350 mA
300 mA
200 mA
DQ
Figure 7. Power Gain versus Output Power
DD
DD
= 300 mA, P
200 mA
300 mA
V
Two−Tone Measurement, 100 kHz Tone Spacing
= 26 Vdc
= 26 Vdc, f = 1960 MHz
Figure 5. Intermodulation Distortion
DD
1920
= 26 Vdc, f = 1960 MHz
300 mA
P
P
400 mA
out
out
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) PEP
out
versus Output Power
1940
= 30 W (PEP)
f, FREQUENCY (MHz)
1960
IMD
G
IRL
10
10
η
ps
1980
2000
TYPICAL CHARACTERISTICS
2020
100
100
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13.5
12.5
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45
40
35
30
25
20
15
10
14
13
12
5
1.0
20
Figure 6. Intermodulation Distortion Products
Intermodulation Distortion versus Supply Voltage
0
2.25 MHz
1.25 MHz
V
Two−Tone Measurement,
100 kHz Tone Spacing
885 kHz
V
I
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
DD
DQ
Figure 4. CDMA ACPR, Power Gain and
DD
Drain Efficiency versus Output Power
= 26 Vdc, I
= 350 mA, f = 1960 MHz, Channel Spacing
f = 1960 MHz
I
Two−Tone Measurement, 100 kHz Tone Spacing
= 26 Vdc
22
DQ
P
2
= 300 mA, P
out
P
, OUTPUT POWER (WATTS Avg.) CDMA
out
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32
V
Figure 8. Power Gain and
DQ
versus Output Power
, OUTPUT POWER (WATTS) PEP
24
DD
= 300 mA, f = 1960 MHz
, DRAIN VOLTAGE (VOLTS)
4
out
5th Order
= 30 W (PEP)
26
MRF19030LR3 MRF19030LSR3
IMD
10
6
G
28
ps
η
G
8
ps
30
7th Order
3rd Order
10
32
100
34
12
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