BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 5

• Manufacturer Part Number: BFG541,115
• Description: TRANS NPN 15V 9GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG541,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 650mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 650 mW
• Maximum Operating Temperature: + 175 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1984-2; 934018870115; BFG541 T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
Fig.4
C
(mW)
CE
P tot
(pF)
C re
= 0; f = 1 MHz.
1000
800
600
400
200
 10 V.
1.0
0.8
0.6
0.4
0.2
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
50
4
100
8
150
V CB (V)
T
MRA654 - 1
s
(
MRA656
o
C)
200
12
5
handbook, halfpage
handbook, halfpage
V
Fig.3
f = 1 GHz; T
Fig.5
h FE
(GHz)
CE
f T
250
200
150
100
= 8 V; T
50
12
0
10
8
4
0
10
−2
−1
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
= 25 C.
10
−1
1
1
10
V CE = 8 V
Product specification
10
I C (mA)
I C (mA)
4 V
BFG541
MRA657
MRA655
10
10
2
2