BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 7

• Manufacturer Part Number: BFG541,115
• Description: TRANS NPN 15V 9GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG541,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 650mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 650 mW
• Maximum Operating Temperature: + 175 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1984-2; 934018870115; BFG541 T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
Fig.10 Intermodulation distortion as a function of
V
Fig.12 Minimum noise figure and associated
(dB)
d im
CE
F min
(dB)
–20
–30
–40
–50
–60
–70
= 8 V.
5
4
3
2
1
0
10
1
collector current.
available gain as functions of collector
current.
2000 MHz
1000 MHz
900 MHz
500 MHz
20
30
10
F min
G ass
40
I C (mA)
f = 900 MHz
50
1000 MHz
2000 MHz
I
C
MEA977
MRA666
(mA)
100
60
20
15
10
5
0
−5
G ass
(dB)
7
handbook, halfpage
handbook, halfpage
(dB)
d 2
Fig.11 Second order intermodulation distortion as
V
Fig.13 Minimum noise figure and associated
CE
F min
(dB)
–20
–30
–40
–50
–60
–70
= 8 V.
5
4
3
2
1
0
10
10
40 mA
10 mA
2
a function of collector current.
available gain as functions of frequency.
I C =10 mA
20
F min
40 mA
30
10
3
G ass
40
f (MHz)
Product specification
50
I
C
BFG541
MEA976
MRA667
(mA)
10
60
4
20
15
10
5
0
−5
G ass
(dB)