BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 6

• Manufacturer Part Number: BFG541,115
• Description: TRANS NPN 15V 9GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG541,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 650mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 650 mW
• Maximum Operating Temperature: + 175 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1984-2; 934018870115; BFG541 T/R

NXP Semiconductors
In Figs 6 to 9, G
maximum stable gain; G
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
C
CE
gain
(dB)
gain
(dB)
= 10 mA; V
Fig.6 Gain as a function of collector current.
= 8 V; f = 900 MHz.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.8 Gain as a function of frequency.
MSG
CE
= 8 V.
UM
20
= maximum power gain; MSG =
MSG
10
2
G UM
max
G max
G UM
40
= maximum available gain.
10
3
G max
60
f (MHz)
I C (mA)
MRA660
MRA658
80
10
4
6
handbook, halfpage
handbook, halfpage
V
I
C
CE
gain
(dB)
gain
(dB)
= 40 mA; V
Fig.7 Gain as a function of collector current.
= 8 V; f = 2 GHz.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.9 Gain as a function of frequency.
CE
= 8 V.
MSG
20
G UM
10
2
G max
G UM
40
10
3
Product specification
G max
60
f (MHz)
I C (mA)
BFG541
MRA659
MRA661
80
10
4