BFG97,115 NXP Semiconductors, BFG97,115 Datasheet
BFG97,115
Specifications of BFG97,115
933919920115
BFG97 T/R
Related parts for BFG97,115
BFG97,115 Summary of contents
Page 1
DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...
Page 2
... NXP Semiconductors NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP complement is the BFG31. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage ...
Page 3
... NXP Semiconductors NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL PARAMETER R thermal resistance from junction to th j-s soldering point Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain ...
Page 4
... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth V BB input 75 Ω Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION C2, C3, C7, C8 multilayer ceramic capacitor C1, C4, C6 multilayer ceramic capacitor C5 (note 1) miniature ceramic plate ...
Page 5
... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth Ω 75 input handbook, full pagewidth handbook, full pagewidth Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board. September 1995 mounting screws M 2.5 (8x Ω output C6 MEA971 60 mm MEA969 60 mm MEA970 Product specification ...
Page 6
... NXP Semiconductors NPN 5 GHz wideband transistor 1.2 handbook, halfpage P tot (W) 1.0 0.8 0.6 0.4 0 100 Fig.4 Power derating curve. 3 handbook, halfpage C re (pF MHz Fig.6 Feedback capacitance as a function of collector-emitter voltage. September 1995 MBB797 handbook, halfpage h FE 150 200 Fig.5 MBB798 ...
Page 7
... NXP Semiconductors NPN 5 GHz wideband transistor 45 handbook, halfpage d im (dB 750 mV 443.25 MHz (pq C. T amb Fig.8 Intermodulation distortion as a function of collector current. 45 handbook, halfpage d 2 (dB dBmV 450 MHz (p C. T amb Fig.10 Second order intermodulation distortion as a function of collector current. ...
Page 8
... NXP Semiconductors NPN 5 GHz wideband transistor 60 handbook, halfpage Z L (Ω –10 –20 0 0.25 0. 900 MHz. CE Fig.12 Load impedance as a function of output power. 60 handbook, halfpage Z L (Ω –10 0 0.25 0. 900 MHz. CE Fig.14 Load impedance as a function of output power. September 1995 MEA963 handbook, halfpage ...
Page 9
... NXP Semiconductors NPN 5 GHz wideband transistor 20 handbook, halfpage Z i (Ω –5 0 0.25 0. 900 MHz. CE Fig.15 Input impedance as a function of output power. 20 handbook, halfpage Z i (Ω –10 0 0.25 0. 900 MHz. CE Fig.17 Input impedance as a function of output power. September 1995 MEA957 handbook, halfpage Z (Ω ...
Page 10
... NXP Semiconductors NPN 5 GHz wideband transistor 80 handbook, halfpage η (%) 0 900 MHz. Fig.18 Efficiency as a function of output power. 10 handbook, halfpage G p ( 900 MHz. Fig.20 Power gain as a function of output power. September 1995 MEA961 handbook, halfpage = 1.5 P (W) OUT MEA960 handbook, halfpage ...
Page 11
... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth + j – mA amb = 50 Fig.22 Common emitter input reflection coefficient (S handbook, full pagewidth o 180 = 25 mA amb Fig.23 Common emitter forward transmission coefficient (S September 1995 MHz GHz 120 o 150 o 2 GHz 100 80 60 ...
Page 12
... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth o 180 = 25 mA amb Fig.24 Common emitter reverse transmission coefficient (S handbook, full pagewidth + j – mA amb = 50 Fig.25 Common emitter output reflection coefficient (S September 1995 90 o 120 o 150 o 0.5 0.4 0.3 0.2 0.1 ...
Page 13
... NXP Semiconductors NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 September 1995 scale 0.32 6.7 3.7 7.3 4.6 2 ...
Page 14
... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
Page 15
... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 16
... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...