BFG97,115 NXP Semiconductors, BFG97,115 Datasheet - Page 12

• Manufacturer Part Number: BFG97,115
• Description: TRANS NPN 15V 5.5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 25
• Frequency (max): 5.5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1986-2; 933919920115; BFG97 T/R

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
I
I
Z
C
C
o
= 70 mA; V
= 70 mA; V
= 50 .
CE
CE
= 10 V; T
= 10 V; T
amb
amb
= 25 C.
= 25 C.
Fig.24 Common emitter reverse transmission coefficient (S
+ j
180
– j
Fig.25 Common emitter output reflection coefficient (S
o
0
150 o
0.5
10
10
150 o
0.4
10
25
25
0.3
120 o
120 o
0.2
25
0.1
2 GHz
40 MHz
90 o
12
90 o
50
50
50
2 GHz
40 MHz
100
60 o
60 o
250
100
100
MBB804
MBB805
30 o
30 o
250
250
22
0 o
).
12
).
ϕ
ϕ
Product specification
BFG97