BLS2731-20,114 NXP Semiconductors, BLS2731-20,114 Datasheet - Page 2

• Manufacturer Part Number: BLS2731-20,114
• Description: TRANSISTOR RF POWER SOT445C
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-20,114

• Package / Case: SOT-445C
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 10dB
• Power - Max: 270W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 500mA, 5V
• Current - Collector (ic) (max): 3A
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 270000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045800114; BLS2731-20 TRAY; BLS2731-20 TRAY

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
QUICK REFERENCE DATA
RF performance at T
1998 Nov 25
Pulsed class-C
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Suitable for short and medium pulse applications
Internal input and output matching networks for an easy
circuit design
Emitter ballasting resistors improve ruggedness
Gold metallization ensures excellent reliability
Interdigitated emitter-base structure provides high
emitter efficiency
Multicell geometry improves power sharing and reduces
thermal resistance.
Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
Microwave power transistor
MODE OF OPERATION
h
= 25 C in a common base class-C test circuit.
2.7 to 3.1
(GHz)
f
WARNING
V
(V)
40
CB
2
PINNING - SOT445C
handbook, halfpage
PIN
1
2
3
(W)
P
25
L
Fig.1 Simplified outline.
Top view
collector
emitter
base connected to flange
typ. 10
(dB)
G
1
2
DESCRIPTION
p
Product specification
BLS2731-20
MBK132
3
typ. 40
(%)
C