BLS2731-20,114 NXP Semiconductors, BLS2731-20,114 Datasheet - Page 5

TRANSISTOR RF POWER SOT445C

BLS2731-20,114

Manufacturer Part Number
BLS2731-20,114
Description
TRANSISTOR RF POWER SOT445C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS2731-20,114

Package / Case
SOT-445C
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
75V
Frequency - Transition
3.1GHz
Gain
10dB
Power - Max
270W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 500mA, 5V
Current - Collector (ic) (max)
3A
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
270000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934045800114
BLS2731-20 TRAY
BLS2731-20 TRAY
Philips Semiconductors
List of components
Notes
1. American Technical Ceramics type 200A or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. American Technical Ceramics type 700A or capacitor of same quality.
1998 Nov 25
handbook, full pagewidth
C1
C2
C3
C4
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (
COMPONENT
Fig.6
40
input
50
Component layout for 2.7 to 3.1 GHz class-C test circuit.
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
multilayer ceramic chip capacitor; note 3
Tekelec trimmer type 37281SL
30
DESCRIPTION
5
r
= 2.2); thickness = 0.38 mm.
C1
C4
30
C2
MGR730
C3
output
50
1 nF
10 pF
150 pF
0.4 to 2.5 pF
BLS2731-20
Product specification
VALUE

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