CA3083Z Intersil, CA3083Z Datasheet - Page 2

• Manufacturer Part Number: CA3083Z
• Description: TRANSISTOR ARRAY NPN 16-PDIP
• Manufacturer: Intersil

Specifications of CA3083Z

• Transistor Type: 5 NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 3V
• Power - Max: 500mW
• Frequency - Transition: 450MHz
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Capacitance, Input: 0.58 pF
• Current, Collector: 100 mA
• Current, Input: 0.002 nA
• Current, Output Clamp: -2.5 A
• Number Of Transistors: 5
• Package Type: PDIP
• Polarization: NPN
• Propagation Delay Time, (high-to-low Level Output): 0.25 us
• Propagation Delay Time, (low-to-high Level Output): 0.25 us
• Voltage, Breakdown, Collector To Emitter: 24 V
• Voltage, Forward: 1.7 V
• Voltage, Input: 24 V
• Voltage, Output: 60 V
• Voltage, Saturation, Collector To Emitter: 0.7
• Module Configuration: Five
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 15V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 100mA
• Dc Current Gain Hfe: 76
• Rohs Compliant: Yes
• Transition Frequency Typ Ft: 450MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, V
Collector-to-Base Voltage, V
Collector-to-Substrate Voltage, V
Emitter-to-Base Voltage, V
Collector Current (I
Base Current (I
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to 125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
NOTE:
FOR EACH TRANSISTOR
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-Cutoff-Current
Collector-Cutoff-Current
DC Forward-Current Transfer Ratio (Note 3) (Figure 1)
Base-to-Emitter Voltage (Figure 2)
Collector-to-Emitter Saturation Voltage (Figures 3, 4)
Gain Bandwidth Product
FOR TRANSISTORS Q
Absolute Input Offset Voltage (Figure 6)
Absolute Input Offset Current (Figure 7)
1. The collector of each transistor of the CA3083 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage
2. θ
3. Actual forcing current is via the emitter for this test.
which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To
avoid undesired coupling between transistors, the substrate Terminal (5) should be maintained at either DC or signal (AC) ground. A suitable
bypass capacitor can be used to establish a signal ground.
JA
is measured with the component mounted on an evaluation PC board in free air.
B
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
PARAMETER
1
AND Q
EBO
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . 5V
. . . . . . . . . . . . . . . . . . . . . . . . 20V
CIO
2
2
. . . . . . . . . . . . . . . . . . . . . . 15V
(As a Differential Amplifier)
For Equipment Design, T
(Note 1). . . . . . . . . . . . . . 20V
V
V
V
SYMBOL
V
V
(BR)CBO
(BR)CEO
(BR)EBO
A
(BR)CIO
CE SAT
I
I
|V
V
CEO
CBO
h
|I
= 25°C
f
IO
FE
BE
T
IO
|
|
CA3083
I
I
I
I
V
V
V
V
I
V
V
V
C
C
CI
E
C
CE
CB
CE
CE
CE
CE
CE
= 100µA, I
= 1mA, I
= 500µA, I
= 50mA, I
= 100µA, I
TEST CONDITIONS
= 10V, I
= 10V, I
= 3V
= 3V, I
= 3V, I
= 3V, I
= 3V, I
Thermal Information
Thermal Resistance (Typical, Note 2)
Maximum Power Dissipation (Any One Transistor) . . . . . . . 500mW
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
PDIP Package . . . . . . . . . . . . . . . . . . .
SOIC Package . . . . . . . . . . . . . . . . . . .
(SOIC - Lead Tips Only)
B
C
C
C
C
B
B
E
E
C
= 0
= 10mA
= 10mA
= 1mA
= 1mA
B
= 5mA
= 0
= 0
= 0
= 0
= 0, I
I
I
C
C
= 10mA
= 50mA
E
= 0
MIN
0.65
20
15
20
40
40
5
-
-
-
-
-
-
TYP
0.74
0.40
450
6.9
1.2
0.7
60
24
60
76
75
-
-
θ
JA
135
200
(°C/W)
MAX
0.85
0.70
2.5
10
1
5
-
-
-
-
-
-
-
February 7, 2006
θ
JC
UNITS
MHz
N/A
N/A
mV
µA
µA
µA
(°C/W)
V
V
V
V
V
V
FN481.6