PEMD9,115 NXP Semiconductors, PEMD9,115 Datasheet - Page 2

• Manufacturer Part Number: PEMD9,115
• Description: TRANS NPN/PNP 50V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMD9,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.21
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 10 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056706115; PEMD9 T/R; PEMD9 T/R

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
• Control of IC inputs.
DESCRIPTION
NPN/PNP resistor-equipped transistors in a SOT666
plastic package.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Apr 15
PEMD9
PUMD9
PEMD9; PUMD9
TYPE NUMBER
TYPE NUMBER
applications
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
* = t: Made in Malaysia.
* = W: Made in China.
SOT666
SOT363
PHILIPS
handbook, halfpage
Top view
PACKAGE
SIMPLIFIED OUTLINE AND SYMBOL
6
1
−
SC-88
5
2
EIAJ
3
4
MAM448
2
TR1
MARKING CODE
6
1
QUICK REFERENCE DATA
V
I
TR1
TR2
R1
R2
SYMBOL
O
CEO
D*9
R1
R2
D9
5
2
(1)
R2
R1
collector-emitter
voltage
output current (DC)
NPN
PNP
bias resistor
bias resistor
PARAMETER
4
3
TR2
PEMB9
PUMB9
COMPLEMENT
PNP/PNP
PEMD9; PUMD9
PIN
1
2
3
4
5
6
−
−
−
−
10
47
TYP. MAX. UNIT
Product data sheet
PEMH9
PUMH9
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
PINNING
COMPLEMENT
DESCRIPTION
NPN/NPN
50
100
−
−
−
−
V
mA
−
−
kΩ
kΩ