PEMD9,115 NXP Semiconductors, PEMD9,115 Datasheet - Page 3

TRANS NPN/PNP 50V 100MA SOT666

PEMD9,115

Manufacturer Part Number
PEMD9,115
Description
TRANS NPN/PNP 50V 100MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMD9,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.21
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
10 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056706115
PEMD9 T/R
PEMD9 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PEMD9,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2004 Apr 15
PEMD9
PUMD9
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
V
I
I
P
T
T
T
Per device
P
TYPE NUMBER
O
CM
stg
j
amb
CBO
CEO
EBO
I
I
tot
tot
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
input voltage TR2
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
positive
negative
SOT363
SOT666
SOT363
SOT666
NAME
PARAMETER
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
3
amb
amb
DESCRIPTION
PACKAGE
≤ 25 °C;
≤ 25 °C;
CONDITIONS
PEMD9; PUMD9
−65
−65
MIN.
Product data sheet
50
50
10
+40
−6
+6
−40
100
100
200
200
+150
150
+150
300
300
MAX.
VERSION
SOT666
SOT363
V
V
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT

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