MJD122T4 STMicroelectronics, MJD122T4 Datasheet
MJD122T4
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MJD122T4 Summary of contents
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... General purpose switching and amplifier Description The device is manufactured using Epitaxial-base technology for high performance. PNP type is MJD127. Table 1. Device summary Order code Marking MJD122T4 MJD122 MJD122-1 MJD122 Low voltage power Darlington transistor TO-251 IPAK (suffix “-1”) Figure 1. Internal schematic diagram R typ ...
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Electrical ratings Electrical ratings 1 Table 2. Absolute maximum rating Symbol V Collector-base voltage (I CBO V Collector-base voltage (I CEO V Emitter-base voltage (I EBO I Collector current C I Collector peak current CM I Base current B Total ...
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MJD122 2 Electrical characteristics (T = 25°C unless otherwise specified) case Table 3. Electrical characteristics Symbol Collector cut-off current I CBO ( Collector cut-off current I CEO ( Emitter cut-off current I EBO (I ...
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MJD122 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...
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MJD122 DIM TO-252 (DPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 ...