MJE521 STMicroelectronics, MJE521 Datasheet - Page 2

• Manufacturer Part Number: MJE521
• Description: TRANSISTOR NPN 40V 4A SOT-32
• Manufacturer: STMicroelectronics

Specifications of MJE521

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 40V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1A, 1V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 4 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 40
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2583-5

MJE521
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle
Symbol
R
CEO(sus)
I
I
thj-amb
h
CBO
EBO
FE
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
DC Current Gain
C
B
= 0)
= 0)
Parameter
E
= 0)
1.5%
V
V
I
I
C
C
CB
EB
= 0.1 A
= 1 A
= 4 V
= 40 V
case
= 25
Test Conditions
o
C unless otherwise specified)
V
CE
= 1 V
Max
Min.
40
40
Typ.
3.12
Max.
100
100
o
Unit
C/W
V
A
A