2SD2012 STMicroelectronics, 2SD2012 Datasheet - Page 2

• Manufacturer Part Number: 2SD2012
• Description: TRANSISTOR NPN 60V 3A TO-220F
• Manufacturer: STMicroelectronics

Specifications of 2SD2012

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 5V
• Power - Max: 25W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 25 W
• Dc Collector/base Gain Hfe Min: 20
• Gain Bandwidth Product Ft: 3 MHz
• Maximum Operating Frequency: 3 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5900-5

2SD2012
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
Safe Operating Area
V
Pulsed: Pulse duration = 300 s, duty cycle
V
Symbol
R
(BR)CEO
CE(sat)
C
V
thj-case
h
I
I
CBO
EBO
BE
FE
CBO
f
T
Thermal Resistance Junction-case
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition frequency
Collector-Base
Capacitance
C
B
= 0)
= 0)
Parameter
E
= 0)
2 %
V
V
I
I
I
I
I
V
V
C
C
C
C
C
CB
EB
CE
CB
= 50 mA
= 2 A
= 0.5 A
= 0.5 A
= 2 A
case
= 7 V
= 5 V
= 60 V
= 10 V I
= 25
Test Conditions
o
E
C unless otherwise specified)
= 0
Derating Curve
I
V
V
I
V
f = 1 MHz
C
B
CE
CE
CE
= 0.5 A
= 0.2 A
= 5 V
= 5 V
= 5 V
Max
Min.
100
60
20
Typ.
0.75
0.4
35
3
5
Max.
100
100
320
1
1
o
Unit
MHz
C/W
pF
V
V
V
A
A