BUL903ED STMicroelectronics, BUL903ED Datasheet - Page 2

• Manufacturer Part Number: BUL903ED
• Description: TRANSISTOR POWER NPN TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL903ED

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1V @ 150mA, 1A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 500mA, 3V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-6683-5; BUL903ED

BUL903ED
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
R
CEO(sus)
CE(sat)
BE(sat)
thj-case
h
I
thj-amb
I
T
E
CES
EBO
V
FE
t
t
t
t
t
t
t
t
RR
d
s
d
s
sb
r
f
r
f
F
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (V
Base-Emitter Leakage
Current
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Parallel Diode Forward
Voltage
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
Diode Reverse
Recovery Time
Avalanche Energy
(I
B
= 0)
Parameter
BE
= 0)
V
V
I
I
I
I
I
I
I
I
V
I
t
V
I
t
I
V
L = 2 mH
C
C
C
C
C
C
C
F
B1
p
B1
p
F
CE
EB
CC
CC
DD
= 3 A
= 300 s
= 300 s
= 1 A
= 10 mA
= 1 A
= 0.1 A
= 0.5 A
= 2.0 A
= 5 mA
= 0.5 A
= 0.05 A
= 0.045 A
= 7 V
= 125 V
= 125 V
= 30 V
= 900 V
case
= 25
Test Conditions
o
C unless otherwise specified)
L = 25 mH
V
I
I
I
I
V
I
I
I
di/dt = 100 A/ s
B
B
B
I
B
C
C
B2
CE
CE
B2
= 0.05 A
= 0.1 A
= 0.4 A
= 0.15 A
= 0.7 A
= 0.5 A
= 0.5 A
= 0.4 A
= 10 V
= 3 V
Max
Max
Min.
400
20
6
8
62.5
1.8
Typ.
300
Max.
0.25
100
1.0
1.0
1.1
1.2
1.2
0.2
1.0
0.8
0.2
0.5
0.8
0.5
1
o
o
Unit
mA
C/W
C/W
mJ
ns
V
V
V
V
V
V
A
s
s
s
s
s
s
s
s