BUL416T STMicroelectronics, BUL416T Datasheet - Page 3

• Manufacturer Part Number: BUL416T
• Description: TRANSISTOR NPN 800V TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL416T

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 800V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1.33A, 4A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 18 @ 700mA, 5V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 800 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 9 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 6 A
• Dc Collector/base Gain Hfe Min: 18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10558-5

BUL416T
2
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(sat)
h
V
I
I
FE
CEO
CES
EBO
t
t
= 25 °C unless otherwise specified.
s
f
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Collector-emitter
sustaining voltage (I
Emitter-base voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Inductive load
Storage time
Fall time
B
C
BE
= 0)
= 0)
= 0)
Parameter
Doc ID 16097 Rev 2
B
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
V
V
C
E
C
C
C
C
C
C
C
CE
CE
CE
BE(off)
CL
= 10 mA
=100 mA
= 2 A
= 4 A
= 2 A
= 4 A
= 10 mA
= 0.7 A
= 3 A
= 200 V
= 1600 V
= 1600 V
= 800 V
Test conditions
= - 5 V R
__
_
_
_
_I
L = 200 µH
T
I
I
I
I
V
V
B1
B
B
B
B
BB
c
CE
CE
= 125 °C
= 0.4 A
= 1.33 A
= 0.4 A
= 1.33 A
= 1 A
= 0
= 5 V
= 5 V
Min.
Electrical characteristics
800
10
18
9
Typ.
800
1.8
Max.
100
500
250
1.2
1.5
1.2
1.5
32
Unit
µA
µA
µA
µs
ns
V
V
V
V
V
V
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