BUL416T STMicroelectronics, BUL416T Datasheet - Page 5

• Manufacturer Part Number: BUL416T
• Description: TRANSISTOR NPN 800V TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL416T

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 800V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1.33A, 4A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 18 @ 700mA, 5V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 800 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 9 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 6 A
• Dc Collector/base Gain Hfe Min: 18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10558-5

BUL416T
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK
is an ST trademark.
Doc ID 16097 Rev 2
Package mechanical data
5/9
®