2PB1424,115 NXP Semiconductors, 2PB1424,115 Datasheet - Page 6

• Manufacturer Part Number: 2PB1424,115
• Description: TRANSISTOR PNP 20V 3.0A SC-62
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of 2PB1424,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 100mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 180
• Gain Bandwidth Product Ft: 125 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 20 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 3 A
• Maximum Dc Collector Current: - 5 A
• Power Dissipation: 2 W
• Maximum Operating Frequency: 125 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059291115

NXP Semiconductors
2PB1424_2
Product data sheet
Fig 4. Collector current as a function of base-emitter
Fig 6. Collector current as a function of
(mA)
(1) T
(2) T
(3) T
(A)
I
I
C
C
10
10
10
10
1
5
4
3
2
1
0
4
3
2
V
voltage; typical values
T
collector-emitter voltage; typical values
0
0
amb
amb
amb
amb
CE
= 2 V
= 100 C
= 25 C
= 40 C
= 25 C
0.2
1
0.4
I
(1)
2
0.6
B
(mA) = 50
(2)
0.8
(3)
3
40
30
20
10
5
1.0
45
35
25
15
4
006aaa946
006aaa948
V
1.2
V
CE
BE
(V)
(V)
Rev. 02 — 15 January 2007
1.4
5
Fig 5. Collector current as a function of
Fig 7. DC current gain as a function of collector
(1) T
(2) T
(3) T
h
(A)
I
FE
C
10
10
2.0
1.6
1.2
0.8
0.4
10
0
1
3
2
T
collector-emitter voltage; typical values
V
current; typical values
0
amb
amb
amb
amb
1
CE
I
B
20 V, 3 A PNP low V
= 2 V
(mA) = 20
= 25 C
= 100 C
= 25 C
= 40 C
18
16
0.2
10
0.4
10
(1)
(2)
(3)
2
0.6
CEsat
14
12
10
8
6
4
2
10
2PB1424
© NXP B.V. 2007. All rights reserved.
3
(BISS) transistor
0.8
006aaa947
I
006aaa949
C
V
CE
(mA)
(V)
10
1.0
4
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