MJD32CT4 STMicroelectronics, MJD32CT4 Datasheet

TRANSISTOR PNP 100V 3A DPAK

MJD32CT4

Manufacturer Part Number
MJD32CT4
Description
TRANSISTOR PNP 100V 3A DPAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of MJD32CT4

Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
15 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
20
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2491-2

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Features
Application
Description
The device is manufactured in planar technology
with “base island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
Table 1.
January 2010
Order code
MJD32CT4
Surface-mounting TO-252 power package in
tape and reel
Complementary to the NPN type MJD31C
General purpose linear and switching
equipment
Device summary
MJD32C
Marking
Doc ID 13673 Rev 3
Package
DPAK
Low voltage PNP power transistor
Figure 1.
Internal schematic diagram
TAB
TO-252
DPAK
Tape and reel
Packaging
1
MJD32C
3
www.st.com
1/9
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MJD32CT4 Summary of contents

Page 1

... The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking MJD32CT4 MJD32C January 2010 Low voltage PNP power transistor TAB Figure 1. Internal schematic diagram Package ...

Page 2

Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Collector-base voltage (I CBO V Collector-emitter voltage (I CEO V Emitter-base voltage (I EBO I Collector current C I Collector peak current CM I Base current B P ...

Page 3

MJD32C 2 Electrical characteristics °C unless otherwise specified. case Table 4. Electrical characteristics Symbol Collector cut-off current I CES (V BE Collector cut-off current I CEO ( Emitter cut-off current I EBO (I = ...

Page 4

Electrical characteristics Figure 4. DC current gain (V Figure 6. Collector-emitter saturation voltage Figure 8. Base-emitter on voltage 4 Figure 5. DC current gain (V CE Figure 7. Base-emitter saturation voltage Figure 9. Resistive load switching ...

Page 5

MJD32C Figure 10. Resistive load switching time (off) 2.2 Test circuits Figure 11. Resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor Figure 12. Inductive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 3. ...

Page 6

Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 7

MJD32C DIM TO-252 (DPAK) mechanical data mm ...

Page 8

Revision history 4 Revision history Table 5. Document revision history Date 25-Jun-2007 09-Nov-2009 14-Jan-2010 8/9 Revision 1 Initial release. 2 Updated package mechanical data. 3 Modified Table 3 on page Doc ID 13673 Rev 3 Changes 2. MJD32C ...

Page 9

... MJD32C Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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