MJD32CT4 STMicroelectronics, MJD32CT4 Datasheet - Page 3

• Manufacturer Part Number: MJD32CT4
• Description: TRANSISTOR PNP 100V 3A DPAK
• Manufacturer: STMicroelectronics

Specifications of MJD32CT4

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 15 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2491-2

MJD32C
2
2.1
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Electrical characteristic (curves)
Figure 2.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(on)
I
I
I
h
CEO
EBO
CES
FE
= 25 °C unless otherwise specified.
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter on voltage
DC current gain
Safe operating area
B
C
B
BE
= 0)
= 0)
= 0)
= 0)
Parameter
Doc ID 13673 Rev 3
V
V
V
I
I
I
I
I
C
C
C
C
C
CE
CB
EB
= - 30 mA
= - 3 A
= - 3 A
= - 1 A
= - 3 A
= - 5 V
= - 100 V
= - 60 V
Test conditions
Figure 3.
_
_ _
_
I
B
V
V
V
= - 375 mA
CE
CE
CE
= - 4 V
= - 4 V
= - 4 V
Derating curve
Electrical characteristics
Min.
-100
25
10
Typ.
-
-
-
-
-
-
-
Max.
-0.1
-1.2
-1.8
-20
-50
50
Unit
mA
µA
µA
V
V
V
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