MJD32CT4 STMicroelectronics, MJD32CT4 Datasheet - Page 2

• Manufacturer Part Number: MJD32CT4
• Description: TRANSISTOR PNP 100V 3A DPAK
• Manufacturer: STMicroelectronics

Specifications of MJD32CT4

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 15 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2491-2

Electrical ratings
1
2/9
Electrical ratings
Table 2.
Table 3.
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Symbol
Symbol
R
V
V
V
T
P
R
thJP
I
CBO
CEO
EBO
CM
STG
T
I
I
TOT
thJC
C
B
J
(1)
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current
Base current
Total dissipation at T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case ________________Max
Thermal resistance junction-pcb
Absolute maximum ratings
Thermal data
Parameter
c
= 25 °C
C
Doc ID 13673 Rev 3
E
= 0)
Parameter
= 0)
B
= 0)
________________
Max
-65 to 150
Value
-100
-100
150
15
-5
-3
-5
-1
Value
8.3
50
MJD32C
Unit
°C
°C
W
V
V
V
A
A
A
°C/W
°C/W
Unit