STX112-AP STMicroelectronics, STX112-AP Datasheet - Page 3

• Manufacturer Part Number: STX112-AP
• Description: TRANSISTOR DARL NPN TO-92
• Manufacturer: STMicroelectronics

Specifications of STX112-AP

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 8mA, 2A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 1A, 4V
• Power - Max: 1.2W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector-emitter Saturation Voltage: 2.5V
• Collector Current (dc) (max): 2A
• Dc Current Gain: 1000
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant

STX112, STX117
2
Note:
2.1
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
Typical characteristic (curves)
Figure 2.
V
case
V
CEO(sus)
Symbol
V
CE(sat)
h
I
I
I
BE(on)
CBO
CEO
EBO
FE
= 25 °C; unless otherwise specified.
(1)
(1)
(1)
Electrical characteristics
DC current gain
(V
Collector cut-off current
(I
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage (I
Collector-emitter saturation
voltage
Base-emitter on voltage
DC current gain
E
B
C
CE
= 0)
= 0)
= 0)
= 3 V NPN)
Parameter
Doc ID 6881 Rev 4
B
= 0)
V
V
V
I
I
I
I
I
C
C
C
C
C
CB
CE
EB
= 2 A
= 2 A
= 1
= 2
= 30 mA
= 100 V
= 50 V
= 5 V
Test conditions
A_ _
A_
Figure 3.
V
V
I
V
B
CE
CE
CE
= 8 mA
= 4 V
= 4 V
= 4 V
DC current gain
(V
CE
= - 3 V PNP)
Electrical characteristics
1000
Min.
100
500
Typ.
-
-
-
-
-
-
-
-
Max.
2.5
2.8
1
2
2
Unit
mA
mA
mA
V
V
V
3/9