STX112-AP STMicroelectronics, STX112-AP Datasheet - Page 4
STX112-AP
Manufacturer Part Number
STX112-AP
Description
TRANSISTOR DARL NPN TO-92
Manufacturer
STMicroelectronics
Specifications of STX112-AP
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
2.5V @ 8mA, 2A
Current - Collector Cutoff (max)
2mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 4V
Power - Max
1.2W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Collector-emitter Saturation Voltage
2.5V
Collector Current (dc) (max)
2A
Dc Current Gain
1000
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
4/9
Figure 4.
Figure 6.
Figure 8.
DC current gain
(V
Collector-emitter saturation
voltage (NPN)
Base-emitter saturation
voltage (NPN)
CE
= 5 V NPN)
Doc ID 6881 Rev 4
Figure 5.
Figure 7.
Figure 9.
DC current gain
(V
Collector-emitter saturation
voltage (PNP)
Base-emitter saturation
voltage (PNP)
CE
= - 5 V PNP)
STX112, STX117