PDTC115TE,115 NXP Semiconductors, PDTC115TE,115 Datasheet - Page 2

• Manufacturer Part Number: PDTC115TE,115
• Description: TRANS NPN W/RES 50V SOT-416
• Manufacturer: NXP Semiconductors

Specifications of PDTC115TE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 100 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2145-2; 934058805115; PDTC115TE T/R

Philips Semiconductors
2. Pinning information
9397 750 14021
Product data sheet
Table 3:
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23, SOT323, SOT346, SOT416
1
2
3
SOT883
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
input (base)
GND (emitter)
output (collector)
Rev. 04 — 17 February 2005
NPN resistor-equipped transistors; R1 = 100 k , R2 = open
Simplified outline
1
2
PDTC115T series
1
Transparent
top view
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
3
001aab348
006aaa144
001aab347
001aab447
2
3
3
1
2
1
2
3
1
2
3
Symbol
1
1
1
1
1
R1
R1
R1
R1
R1
006aaa218
006aaa218
006aaa218
sym012
sym012
2 of 10
2
3
2
3
2
3
3
2
3
2