PDTC115TE,115 NXP Semiconductors, PDTC115TE,115 Datasheet - Page 8

• Manufacturer Part Number: PDTC115TE,115
• Description: TRANS NPN W/RES 50V SOT-416
• Manufacturer: NXP Semiconductors

Specifications of PDTC115TE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 100 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2145-2; 934058805115; PDTC115TE T/R

Philips Semiconductors
10. Revision history
Table 10:
9397 750 14021
Product data sheet
Document ID
PDTC115T_SER_4
Modifications
PDTC115TT_3
PDTC115TT_2
PDTC115TT_1
Revision history
Release date
20050217
20040727
20040510
20040305
•
•
•
•
The types PDTC115TE, PDTC115TK, PDTC115TM, PDTC115TS and PDTC115TU were
added.
Table 1 “Product overview”
Figure 1
Section 9 “Packing information”
and
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
2
added
Rev. 04 — 17 February 2005
NPN resistor-equipped transistors; R1 = 100 k , R2 = open
added
added
Change notice
-
-
-
-
PDTC115T series
Doc. number
9397 750 14021
9397 750 13505
9397 750 13206
9397 750 12554
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Supersedes
PDTC115TT_3
PDTC115TT_2
PDTC115TT_1
-
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