PDTC115TE,115 NXP Semiconductors, PDTC115TE,115 Datasheet - Page 4

TRANS NPN W/RES 50V SOT-416

PDTC115TE,115

Manufacturer Part Number
PDTC115TE,115
Description
TRANS NPN W/RES 50V SOT-416
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC115TE,115

Package / Case
SC-75, SOT-416
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
150mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
100 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2145-2
934058805115
PDTC115TE T/R
Philips Semiconductors
5. Limiting values
6. Thermal characteristics
9397 750 14021
Product data sheet
Table 6:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7:
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
Symbol
R
O
CM
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 m copper strip line.
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 04 — 17 February 2005
NPN resistor-equipped transistors; R1 = 100 k , R2 = open
Conditions
in free air
Conditions
open emitter
open base
open collector
T
T
T
T
T
T
amb
amb
amb
amb
amb
amb
25 C
25 C
25 C
25 C
25 C
25 C
[2] [3]
PDTC115T series
[1]
[1]
[1]
[1]
[1]
[2] [3]
Min
-
-
-
-
-
-
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
-
-
-
-
Max
50
50
5
100
100
150
250
250
500
250
200
+150
150
+150
Max
833
500
500
250
500
625
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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