MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 6

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

General Description
PDF: 09005aef80a41b59/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_D2.fm - Rev. P 1/11 EN
The Micron
designed for high bandwidth data storage—telecommunications, networking, and
cache applications, etc. The chip’s 8-bank architecture is optimized for sustainable high
speed operation.
The double data rate (DDR) separate I/O interface transfers two data words per clock
cycle at the I/O balls. The read port has dedicated data outputs to support READ opera-
tions, while the write port has dedicated input balls to support WRITE operations.
Output data is referenced to the free-running output data clock. This architecture elimi-
nates the need for high-speed bus turnaround.
Commands, addresses, and control signals are registered at every positive edge of the
differential input clock, while input data is registered at both positive and negative edges
of the input data clock(s).
Read and write accesses to the RLDRAM are burst-oriented. The burst length (BL) is
programmable from 2, 4, or 8 by setting the mode register.
The device is supplied with 2.5V and 1.8V for the core and 1.5V or 1.8V for the output
drivers.
Bank-scheduled refresh is supported with the row address generated internally.
The µBGA144-ball package is used to enable ultra high-speed data transfer rates and a
simple upgrade path from early generation devices.
®
reduced latency DRAM (RLDRAM
288Mb: x18 2.5V V
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
EXT
, 1.8V V
®
) II is a high-speed memory device
DD
, HSTL, SIO, RLDRAM II
General Description
©2003Micron Technology, Inc. All rights reserved.