MC9S08QG8CDTER Freescale, MC9S08QG8CDTER Datasheet - Page 270

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MC9S08QG8CDTER

Manufacturer Part Number
MC9S08QG8CDTER
Description
Manufacturer
Freescale
Datasheet

Specifications of MC9S08QG8CDTER

Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
20MHz
Interface Type
I2C/SCI/SPI
Total Internal Ram Size
512Byte
# I/os (max)
12
Number Of Timers - General Purpose
1
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
16
Package Type
TSSOP
Program Memory Type
Flash
Program Memory Size
8KB
Lead Free Status / RoHS Status
Compliant

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Appendix A Electrical Characteristics
A.4
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
268
ESD Protection and Latch-Up Immunity
1
Latch-up
Machine
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Model
Human
Body
No.
1
2
3
4
Series resistance
Storage capacitance
Number of pulses per pin
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Human body model (HBM)
Machine model (MM)
Charge device model (CDM)
Latch-up current at T
Table A-4. ESD and Latch-Up Protection Characteristics
Table A-3. ESD and Latch-up Test Conditions
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
Description
Rating
1
A
= 125°C
Symbol
Symbol
V
V
V
I
R1
R1
HBM
CDM
LAT
C
C
MM
± 2000
± 200
± 500
± 100
Min
Value
1500
– 2.5
100
200
7.5
3
0
3
Max
Freescale Semiconductor
Unit
Unit
mA
pF
pF
Ω
Ω
V
V
V
V
V

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