IDT82V3285DQ IDT, Integrated Device Technology Inc, IDT82V3285DQ Datasheet - Page 127
IDT82V3285DQ
Manufacturer Part Number
IDT82V3285DQ
Description
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet
1.IDT82V3285DQ.pdf
(143 pages)
Specifications of IDT82V3285DQ
Function
Wan PLL
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Package Type
TQFP
Pin Count
100
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IDT82V3285DQG
Manufacturer:
IDT
Quantity:
200
Part Number:
IDT82V3285DQG
Manufacturer:
IDT
Quantity:
20 000
Table 42: Power Consumption and Maximum Junction Temperature
8
+85°C. To ensure the functionality and reliability of the device, the maxi-
mum junction temperature T
applications, the device will consume more power and a thermal solution
should be provided to ensure the junction temperature T
exceed the T
8.1
geographical center of the chip where the device's electrical circuits are.
It can be calculated as follows:
be used. The θ
in the loads.
ments.
8.2
Table 43: Thermal Data
Thermal Management
IDT82V3285
TQFP/DQ100
The device operates over the industry temperature range -40°C ~
Junction temperature T
Where:
In order to calculate junction temperature, an appropriate θ
Power consumption is the core power excluding the power dissipated
Package
Assume:
TQFP/DQ100
TQFP/DQ100
Package
Equation 1: T
θ
T
T
P = Device Power Consumption
T
θ
s)
P = 1.9W
A
A
JA
j
JA
= Junction Temperature
= 85°C
= Ambient Temperature
= 18.5°C/W (TQFP/DQ100 Soldered & when airflow rate is 0 m/
= Junction-to-Ambient Thermal Resistance of the Package
THERMAL MANAGEMENT
JUNCTION TEMPERATURE
EXAMPLE OF JUNCTION TEMPERATURE
CALCULATION
jmax
Table 42
JA
Consumption (W)
.
is shown in
Pin Count Thermal Pad
j
Power
= T
1.9
100
100
provides power consumption in special environ-
A
+ P X
j
is the temperature of package typically at the
jmax
Table
θ
Yes/Soldered
Yes/Exposed
JA
should not exceed 125°C. In some
Operating
43.
Voltage
(V)
3.6
T
A
θ
85
(°C)
JC
10.8
10.8
(°C/W)
Temperature (°C)
Maximum
Junction
j
125
does not
JA
θ
JB
must
23.7
3.0
(°C/W)
127
temperature of 125°C, so no extra heat enhancement is required.
might exceed the maximum junction temperature of 125°C and an exter-
nal thermal solution such as a heatsink is required.
8.3
attached. θ
resistance, as the heat flowing from the die junction to ambient goes
through the package and the heatsink. θ
be selected to ensure the junction temperature does not exceed the
maximum junction temperature. According to Equation 1 and 2,
below or equal to 10.3°C/W is used in such operation environment, the
junction temperature will not exceed the maximum junction temperature.
The junction temperature T
The junction temperature of 120.2°C is below the maximum junction
In some operation environments, the calculated junction temperature
A heatsink is expanding the surface area of the device to which it is
Where:
θ
Assume:
θ
That is, if a heatsink and heatsink attachment whose
θ
CH
CH
CH
18.5
27.2
+ θ
+ θ
0
T
Equation 2:
θ
θ
θ
Equation 3:
T
T
P = 1.9 W
θ
θ
+ θ
A
j
JC
CH
HA
j
JC
CH
= T
= 125°C (T
HA
= 85°C
HA
HA
JA
+
= Junction-to-Case Thermal Resistance
= 10.8°C/W (TQFP/DQ100)
= Case-to-Heatsink Thermal Resistance
= Heatsink-to-Ambient Thermal Resistance
HEATSINK EVALUATION
A
θ
can be calculated as follows:
is now a combination of device case and heat-sink thermal
determines which heatsink and heatsink attachment can
can be calculated as follows:
+ P X
HA
24.7
15.4
= (125°C - 85°C ) / 1.9W - 10.8°C/W = 10.3°C/W
1
θ
θ
jmax
θ
JA
CH
JA
θ
+
=
)
= 85°C + 1.9W X 18.5°C/W = 120.2°C
JA
θ
θ
HA
JC
(°C/W) vs Air Flow in m/s
23.3
13.9
+
= (T
j
2
θ
can be calculated as follows:
CH
j
- T
+
A
θ
) / P -
HA
JA
22.4
13.1
3
θ
can be calculated as follows:
JC
21.9
12.6
4
April 11, 2007
θ
CH
WAN PLL
+
21.5
12.2
θ
5
HA
is