FP50R12KE3 Infineon Technologies, FP50R12KE3 Datasheet - Page 2

• Manufacturer Part Number: FP50R12KE3
• Description: IGBT Modules 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
T
T
T
T
T
V
V
V
f = 1MHz, T
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
T
FP50R12KE3
C
C
C
C
C
C
P
vj
vj
vj
vj
C
vj
GE
GE
CE
CE
GE
CE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= I
= I
= I
= I
= I
= I
= 150°C,
= 150°C
= 150°C
= 150°C,
= 25°C
125°C,
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V,
= 0V, V
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
= ±15V, T
10µs, V
Nenn
Nenn
Nenn
Nenn
Nenn
Nenn
GE
,
,
,
,
,
,
,
GE
vj
T
T
GE
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
=20V, T
= 25°C, V
= 25°C,
= 125°C,
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 25°C, R
= 125°C, R
= 125°C, R
= 125°C, R
= 25°C,
2(11)
= 0 V
15V,
vj
=25°C
V
V
V
V
V
V
V
R
L =
L =
CC
CE
CC
CC
CC
CC
CC
CC
I
I
G
I
V
G
G
G
G
G
G
G
G
G
G
C
C
C
I
=
F
=
R
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
= 50 A
= 1600 V
50 A
50 A
2,0 mA
1200 V
600 V
18 Ohm
18 Ohm
600 V
18 Ohm
18 Ohm
600 V
18 Ohm
18 Ohm
600 V
18 Ohm
18 Ohm
600 V
18 Ohm
45 nH
600 V
18 Ohm
45 nH
18 Ohm
720 V
R
V
V
V
V
AA'+CC'
GE(TO)
C
I
I
t
t
E
E
CE sat
V
CES
GES
I
d,on
d,off
ISOL
I
(TO)
r
SC
t
t
R
ies
T
on
off
r
f
F
min.
min.
5,0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
420
520
200
2,5
1,7
5,8
3,5
6,6
5,8
85
90
30
45
65
90
1
3
4
2
-
-
-
-
DB-PIM-IGBT3_2Serie.xls
max.
max.
2,15
400
0,8
6,5
6,5
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mWs
mWs
m
m
mA
mA
kV
nF
nA
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A