FP50R12KE3 Infineon Technologies, FP50R12KE3 Datasheet - Page 3

• Manufacturer Part Number: FP50R12KE3
• Description: IGBT Modules 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
Schaltverluste und -bedingungen
Switching losses and conditions
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
Schaltverluste und -bedingungen
Switching losses and conditions
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
100
100
T
V
V
I
V
V
I
V
V
I
V
V
V
V
V
f = 1MHz, T
V
V
V
siehe Wechselrichter in Dbl FP40R12KE3
see inverter in datasheet FP40R12KE3
T
T
siehe Wechselrichter in Dbl FP15R12KE3
see inverter in datasheet FP15R12KE3
T
T
T
R
FP50R12KE3
F
F
F
C
vj
vj
C
C
C
GE
GE
=I
GE
GE
=I
GE
GE
=I
GE
GE
GE
GE
CE
CE
GE
CE
2
= 25°C
= 25°C,
= 125°C,
= 25°C
= 100°C, R
= 25°C
= R
Nenn
Nenn
Nenn
= 0V, T
= 0V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V, T
= 0V, V
1
,
,
,
GE
exp [B(1/T
,
GE
vj
vj
vj
vj
T
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
100
= 20V, T
= 25°C,
= 125°C,
= 25°C, V
vj
= 25°C,
= 125°C,
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
3(11)
= 0 V
= 25°C,
= 493
2
- 1/T
- di
- di
- di
vj
1
= 25°C
)]
F
F
F
I
I
/dt =
/dt =
/dt =
CE
I
I
F
F
I
R
R
R
R
R
R
I
I
C
C
C
F
F
=
=
=
=
=
=
=
=
=
=
=
=
=
=
50 A
50 A
1200 A/µs
600 V
600 V
1200 A/µs
600 V
600 V
1200 A/µs
600 V
600 V
40 A
40 A
1,5 mA
1200 V
40 A
40 A
R
V
V
B
L
CC'+EE'
E
GE(TO)
C
I
I
R
P
I
CE sat
V
CES
GES
V
R/R
Q
25/50
RM
rec
ies
25
25
CE
F
F
r
min.
min.
min.
min.
min.
5,0
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3375
typ.
typ.
typ.
typ.
typ.
1,65
1,65
2,15
2,35
2,55
6,2
2,1
4,4
1,8
5,8
2,5
5,0
51
50
12
7
5
-
-
DB-PIM-IGBT3_2Serie.xls
max.
max.
max.
max.
max.
2,15
500
400
2,3
6,5
2,8
60
20
5
-
-
-
-
-
-
-
-
-
-
-
-
mWs
mWs
µAs
µAs
mW
m
mA
nH
k
nF
nA
%
V
V
A
A
V
V
V
V
V
K