FP50R12KE3 Infineon Technologies, FP50R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FP50R12KE3
• Description: IGBT Modules 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of FP50R12KE3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.15 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPIM™ 3
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
12
10
8
6
4
2
0
20
18
16
14
12
10
8
6
4
2
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
5
20
Eon
Eoff
Erec
Eon
Eoff
Erec
10
FP50R12KE3
40
15
R
I
C
G
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
20
60
= f (R
C
), E
G
), E
GE
off
V
= +-15 V ,
25
off
GE
= f (I
= ±15 V,
= f (R
80
C
), E
G
), E
rec
I
c
30
= I
= f (I
rec
nenn
R
Gon
= f (R
C
,
100
)
= R
V
V
CC
CC
G
Goff
35
)
=
=
=
DB-PIM-IGBT3_2Serie.xls
600 V
18 Ohm
600 V
120
40