BSM35GD120DN2E3224 Infineon Technologies, BSM35GD120DN2E3224 Datasheet - Page 3

• Manufacturer Part Number: BSM35GD120DN2E3224
• Description: IGBT Modules N-CH 1.2KV 50A
• Manufacturer: Infineon Technologies

Specifications of BSM35GD120DN2E3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 150 nA
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2
• Lead Free Status / RoHS Status: Compliant

BSM 35 GD 120 DN2 E3224
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
di
Reverse recovery charge
I
di
T
T
F
F
F
F
CC
CC
CC
CC
j
j
Gon
Gon
Goff
Goff
F
F
= 35 A, V
= 35 A, V
= 35 A, V
= 35 A, V
= 25 °C
= 125 °C
/dt = -800 A/µs, T
/dt = -800 A/µs
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 39
= 39
= 39
= 39
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 0 V
= 0 V
= 35 A
= 35 A
= 35 A
= 35 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
Values
typ.
60
60
400
50
2.3
1.9
0.25
2
5
max.
-
-
-
-
120
120
600
75
2.9
2006-01-31
Unit
ns
V
µs
µC