BSM35GD120DN2E3224 Infineon Technologies, BSM35GD120DN2E3224 Datasheet - Page 5

• Manufacturer Part Number: BSM35GD120DN2E3224
• Description: IGBT Modules N-CH 1.2KV 50A
• Manufacturer: Infineon Technologies

Specifications of BSM35GD120DN2E3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 150 nA
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2
• Lead Free Status / RoHS Status: Compliant

BSM 35 GD 120 DN2 E3224
Typ. output characteristics
I
Typ. transfer characteristics
I
C
parameter: t
C
parameter: t
I
I
C
C
= f (V
= f (V
70
60
55
50
45
40
35
30
25
20
15
10
70
60
55
50
45
40
35
30
25
20
15
10
A
A
5
0
5
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
70
60
55
50
45
40
35
30
25
20
15
10
A
5
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
2
j
= 125 °C
3
2006-01-31
V
V
CE
5