BSM35GD120DN2E3224 Infineon Technologies, BSM35GD120DN2E3224 Datasheet - Page 8

• Manufacturer Part Number: BSM35GD120DN2E3224
• Description: IGBT Modules N-CH 1.2KV 50A
• Manufacturer: Infineon Technologies

Specifications of BSM35GD120DN2E3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 150 nA
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2
• Lead Free Status / RoHS Status: Compliant

BSM 35 GD 120 DN2 E3224
Forward characteristics of fast recovery
reverse diode
parameter: T
I
F
70
60
55
50
45
40
35
30
25
20
15
10
A
5
0
0.0
j
0.5
I
F
= f(V
1.0
F
T
)
j
=125°C
1.5
2.0
T
j
=25°C
V
V
F
3.0
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
= (t
-1
-2
-3
0
10
p
-5
)
single pulse
10
p
-4
/ T
10
-3
10
-2
Diode
D = 0.50
10
2006-01-31
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0