IKW40T120XK Infineon Technologies, IKW40T120XK Datasheet
IKW40T120XK
Specifications of IKW40T120XK
Related parts for IKW40T120XK
IKW40T120XK Summary of contents
Page 1
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Best in class TO247 Short circuit withstand time – Designed for : - Frequency Converters - Uninterrupted Power Supply ® ...
Page 2
Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors ® TrenchStop Series - 2 IKW40T120 260 Rev. 2.2 Sep 08 ...
Page 3
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation ...
Page 4
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case 1) Short circuit collector current Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off ...
Page 5
Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse ...
Page 6
T =80°C C 80A T =110°C C 60A 40A I c 20A 10Hz 100Hz 1kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T 150 0. ...
Page 7
V =17V 80A GE 15V 70A 13V 60A 11V 50A 9V 40A 7V 30A 20A 10A COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristic (T = 25°C) j 100A ...
Page 8
I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load, T =150° =600V, V =0/15V, R ...
Page 9
E and E include losses on ts due to diode recovery 25,0mJ 20,0mJ 15,0mJ 10,0mJ 5,0mJ 0,0mJ 10A 20A 30A 40A I , COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of collector current (inductive ...
Page 10
Q , GATE CHARGE GE Figure 17. Typical gate charge (I = 15µs 10µs 5µs 0µs 12V 14V GATE EMITTETR VOLTAGE GE Figure 19. Short circuit ...
Page 11
V CE 600V 400V 200V 0us 0.5us 1us t, TIME Figure 21. Typical turn on behavior (V =0/15V, R =15Ω Dynamic test circuit in Figure E) D=0.5 0 K/W 0 ...
Page 12
DIODE CURRENT SLOPE F Figure 23. Typical reverse recovery time as a function of diode current slope (V =600V, I =40A Dynamic test circuit in Figure ...
Page 13
T =25°C J 150°C 80A 60A 40A 20A FORWARD VOLTAGE F Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® TrenchStop Series I =80A 2,0V F 40A 1,5V ...
Page 14
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 19.80 4.17 3.50 5.49 6.04 Power Semiconductors ® TrenchStop Series PG-TO247 MAX MIN MAX 5.16 0.193 0.203 2.53 0.089 0.099 2.11 ...
Page 15
Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure ...
Page 16
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...