IKW40T120XK Infineon Technologies, IKW40T120XK Datasheet - Page 9

• Manufacturer Part Number: IKW40T120XK
• Manufacturer: Infineon Technologies

Specifications of IKW40T120XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Power Semiconductors
25,0mJ
20,0mJ
15,0mJ
10,0mJ
15mJ
10mJ
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
5,0mJ
0,0mJ
5mJ
0mJ
10A
*) E
*) E
due to diode recovery
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
50°C
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
due to diode recovery
20A
on
J
I
CE
GE
on
,
C
and E
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
and E
COLLECTOR CURRENT
30A
ts
ts
include losses
include losses
40A
C
GE
=40A, R
100°C
=0/15V, R
J
CE
=150°C,
50A
=600V,
G
=15Ω,
60A
G
=15Ω,
150°C
TrenchStop
70A
E
E
E
E
E
E
9
off
on
on
ts
ts
off
*
*
*
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
15 mJ
10 mJ
15mJ
10mJ
®
5 mJ
0 mJ
5mJ
0mJ
Series
400V
E
E
V
E
ts
on
off
CE
*
*) E
*
*) E
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
due to diode recovery
due to diode recovery
CE
GE
COLLECTOR
on
on
500V
=600V, V
=0/15V, I
and E
R
and E
G
,
GATE RESISTOR
ts
ts
include losses
include losses
600V
-
C
GE
EMITTER VOLTAGE
=40A, R
IKW40T120
=0/15V, I
J
J
=150°C,
=150°C,
700V
Rev. 2.2
G
=15Ω,
C
=40A,
800V
Sep 08
E
E
E
ts
on
off
*
*