IKW40T120XK Infineon Technologies, IKW40T120XK Datasheet - Page 5

• Manufacturer Part Number: IKW40T120XK
• Manufacturer: Infineon Technologies

Specifications of IKW40T120XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
r r
r r
/ d t
TrenchStop
j
=150 C
5
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
C C
G E
R
G
= 150 C
= 150 C
F
1 )
1 )
= 60 0 V , I
= 1 5 ,
/d t= 800A/ s
= 60 0 V, I
= 0 /1 5 V,
=1 80nH,
=39pF
Conditions
®
Series
F
C
=40A,
=40A,
min.
-
-
-
-
-
-
-
-
-
-
-
IKW40T120
Value
10.4
typ.
580
120
410
330
5.0
5.4
8.8
52
40
36
Rev. 2.2
max.
-
-
-
-
-
-
-
-
-
-
Sep 08
Unit
ns
mJ
ns
µC
A
A/ s