IKW40T120XK Infineon Technologies, IKW40T120XK Datasheet - Page 11

• Manufacturer Part Number: IKW40T120XK
• Manufacturer: Infineon Technologies

Specifications of IKW40T120XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Power Semiconductors
10
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
0V
-1
-2
-3
K/W
K/W
K/W
0us
V
I
10µs
C
CE
0.05
D=0.5
0.2
0.1
(V
Dynamic test circuit in Figure E)
(D = t
0.5us
GE
100µs
=0/15V, R
0.01
0.02
single pulse
t
p
P
,
/ T)
PULSE WIDTH
t,
1ms
TIME
1us
R
0.159
0.133
0.120
0.038
G
R , ( K / W )
1
=15Ω, T
C
1
=
10ms
1
/ R
1.5us
1
j
C
= 150 C,
1.10*10
1.56*10
1.35*10
1.51*10
2
100ms
=
, ( s )
2
/ R
TrenchStop
R
2
-1
-2
-3
-4
2
60A
40A
20A
0A
11
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal
60A
40A
20A
0A
10
10
10
®
0us
-1
-2
-3
V
I
K/W
K/W
K/W
C
Series
CE
10µs
D=0.5
0.05
(V
Dynamic test circuit in Figure E)
impedance as a function of pulse
width
(D=t
0.2
0.1
0.5us
GE
P
=15/0V, R
100µs
/T)
t
0.02
0.01
single pulse
P
,
PULSE WIDTH
t,
1us
TIME
1ms
IKW40T120
G
=15Ω, T
R
0.228
0.257
0.238
0.087
R , ( K / W )
1
C
1
=
10ms
1.5us
1
Rev. 2.2
/ R
j
1
= 150 C,
C
1.01*10
1.15*10
1.30*10
1.53*10
2
=
100ms
, ( s )
2
/ R
Sep 08
R
2
-1
-2
-3
-4
600V
400V
200V
0V
2